Web60 V, 1 A PNP medium power transistors, BC52-16PAS Datasheet, BC52-16PAS circuit, BC52-16PAS data sheet : NEXPERIA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. Web60 V, 1 A NPN medium power transistors, BC55-16PA Datasheet, BC55-16PA circuit, BC55-16PA data sheet : NEXPERIA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
BC637, BC639, BC639−16 High Current Transistors - Futurlec
WebBC637/D BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC637 BC639 VCEO 60 80 Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc … WebBC637 onsemi Bipolar Transistors - BJT 500mA 60V NPN datasheet, inventory & pricing. Skip to Main Content. 080 42650000. Contact Mouser (Bangalore) 080 42650000 Feedback. Change Location English INR ₹ INR $ USD India. Please confirm your currency selection: Indian Rupee order energy performance certificate
BC637 datasheet & application notes - Datasheet Archive
WebJan 1, 2024 · BC637 NPN High Current Transistor – Datasheet. January 1, 2024 by Wajid Hussain. 1,173 views. BC637 NPN High Current Transistor is designed for the Driver stages of audio/video amplifiers. NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC636. WebCharacteristics of BC637 Transistor Type: NPN Collector-Emitter Voltage, max: 60 V Collector-Base Voltage, max: 60 V Emitter-Base Voltage, max: 5 V Collector Current − Continuous, max: 0.5 A Collector Dissipation: 0.625 W DC Current Gain (h fe ): 40 to 160 Transition Frequency, min: 200 MHz WebBC637 − 60 V BC639 − 100 V VCEO collector-emitter voltage open base BC635 − 45 V BC637 − 60 V BC639 − 80 V ICM peak collector current − 1.5 A Ptot total power dissipation Tamb ≤25 °C − 0.83 W hFE DC current gain IC = 150 mA; VCE = 2 V 40 250 fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz 100 − MHz order embroidered shirts online